$MU $DRAM Micron just demonstrated the world's first 512GB DDR5 RDIMM running at 9200 MT/s, best in class product, just hits week. AMD and Intel are validating it now for their next gen platforms. Volume production targets 2H 2027. One 512GB stick draws 16W versus 44.2W for the four 128GB modules it replaces. Over 60% less power for the same capacity.

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$MU $DRAM $AMAT Interesting. Through-silicon via (TSV) technology is expanding to RDIMM modules to make them much faster. Micron Samples 256GB DDR5 RDIMMs at 9,200 MT/s for AI Servers, 40% Faster & More Power Efficient Built on Micron’s leading-edge 1-gamma DRAM process with advanced 3D stacking (3DS) and through-silicon vias (TSVs). Speed: Up to 9,200 MT/s — >40% faster than current volume production DDR5 server modules. Power efficiency: A single 256GB module consumes >40% less operating power than two 128GB modules (11.1W vs. 19.4W total). Targeted at AI/HPC workloads (large language models, agentic AI, real-time inference, high-core-count servers) to deliver higher capacity per socket while staying within data center power and thermal limits.