Trade[XYZ] SKHY tracks the value of 1 SK Hynix American Depositary Share — the Nasdaq-listed security representing one-tenth of a SK Hynix common share held on deposit with a depositary bank. It launches as a pre-IPO contract and converts to a standard XYZ perpetual after the ADS begins… Trade[XYZ] SKHY追踪1份SK海力士美国存托凭证（ADS）的价值——该ADS是在纳斯达克上市的证券，代表SK海力士普通股的十分之一，存放在存托银行。它最初作为IPO前合约推出，并在ADS上市后转换为标准的XYZ永续合约…… ———————————— 2026-07-09 22:16:15

SK hynix sharply raises share of leading edge DRAM… 1c to become main process early next year SK hynix is rapidly expanding the production share of its sixth generation 10nm class (1c) DRAM. With 1c DRAM set to serve as the core die stacked into next generation high bandwidth memory (HBM4E), the company appears to be accelerating its process transition. As demand for high value added memory for servers and artificial intelligence (AI) grows, the race with Samsung Electronics and Micron to migrate to finer process nodes is also heating up. "1c process share expected to exceed 34% within the year" According to industry sources on the 7th, SK hynix's 1c DRAM share rose from around 10% in the first quarter of this year to the 13% range in the second quarter. It is projected to reach the 24% range in the third quarter and the 34% range in the fourth quarter. In the first quarter of next year, the 1c share is expected to climb to the 35% range, overtaking 1b (33% range) for the first time and becoming the company's main process. The share of 1b (fifth generation 10nm class) DRAM was found to have peaked at the 43% range in the second quarter of this year and turned downward. As the production shift to 1c gets into full swing, the share of older generation processes is shrinking in sequence. Industry estimates show that, as of the end of the second quarter, Samsung Electronics' 1c share stood in the 16% range and Micron's in the 19% range, somewhat ahead of SK hynix (13% range). However, with SK hynix stepping up the pace of its transition in the second half of this year, it is expected to overtake Samsung Electronics (31% range) on a fourth quarter basis (34% range). On its second quarter earnings conference call last month, SK hynix said that supply of DRAM built on the sixth generation 10nm class (1c) process had begun in earnest in the second quarter. The company projected that bit growth (the rate of increase in production volume) in the second half of this year would exceed the first half, driven by expanding HBM4 (sixth generation HBM) volumes and rising shipments of 1c based commodity DRAM. Process transition in preparation for HBM4E performance gains The battle for HBM4 leadership between Samsung Electronics and SK hynix is also intertwined with the pace of the 1c transition. Samsung Electronics is applying 1c DRAM from the HBM4 stage onward and is touting top tier performance with operating speeds of around 11.7Gbps. SK hynix, by contrast, chose a strategy that prioritizes mass production stability, relying on its proven 1b DRAM and advanced MR-MUF packaging technology, and is applying 1c DRAM as the core HBM die for the first time starting with next generation HBM4E (seventh generation HBM). Industry observers say this difference in strategy is being reflected in the two companies' market shares. Major research firms including Counterpoint Research project this year's HBM4 market share, on a combined basis across NVIDIA, Google, AMD and others, at the mid 50% range for SK hynix, the high 20% range for Samsung Electronics, and the high 10% range for Micron. The picture is one in which SK hynix holds its volume advantage on the strength of mass production stability, while Samsung Electronics seeks to expand share through a technical spec advantage. Against this backdrop, analysts say SK hynix's push to speed up the 1c transition will translate into tangible benefits in cost and productivity, beyond simply shrinking the node. Since bit output per wafer rises compared with the previous generation, more bits are produced from the same wafer input, improving cost competitiveness, which is cited as a factor that will help defend DRAM segment profitability from the second half onward. With the 1c transition proceeding alongside a growing mix of high value added products for servers and HBM, analysts say productivity gains are highly likely to feed directly into margin improvement. An official in the semiconductor industry said, "The pace of the 1c transition itself is encouraging, but it only becomes meaningful if actual production yields and customer qualification schedules back it up," adding, "Starting with HBM4E, the fine process competition between Samsung Electronics and SK hynix will intensify further."

SK Group Chairman Chey Tae-won: “Joint production with Japan’s Kioxia is also one option.” “Kioxia is a company with many strengths.” “If SK hynix can be part of Kioxia’s future strategy, we are ready to be a partner at any time.” “If there is no longer any possibility of building further cooperation, we will end our investment in Kioxia.”

SK HYNIX WEIGHS JAPAN MEMORY FAB JV TO MEET AI DEMAND $SKHY is studying a jointly operated memory-chip plant in Japan, with locations being evaluated based on access to power and water. The move would add to its global expansion, which already includes a ~$39B capacity buildout in Korea and a $4B advanced memory packaging facility in Indiana. SK Hynix is also looking to deepen ties with Japanese customers and suppliers as demand for HBM and NAND continues to rise.

SK Hynix CEO this week on the memory situation: "There are no clear signs of a downturn, so this situation will continue through the end of 2030...Even if a downturn comes, it will be closer to a gradual decline or flat trend rather than a steep drop,. After 2030, I believe supply and demand will find balance and the entire AI industry can grow together."