The AI Investor(@The_AI_Investor):Samsung is reportedly developing next-gen HBM packaging for mobile on-device AI. According to ETNews, Samsung is working on “Multi Stacked FOWLP,” combining advanced copper-pillar stacking with fan-out wafer-level packaging. Today’s mobile LPDDR still uses copper wire bonding, which limits I/O to roughly 128–256 terminals and creates signal-loss, thermal, and power-efficiency bottlenecks. Samsung’s VCS technology improves this by stacking DRAM dies in a staircase structure and connecting them with copper pillars. The new approach appears to push that further, aiming to bring HBM-like bandwidth closer to mobile devices.

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The AI Investor@The_AI_Investor

2026.05.18 06:57

Samsung is reportedly developing next-gen HBM packaging for mobile on-device AI. According to ETNews, Samsung is working on “Multi Stacked FOWLP,” combining advanced copper-pillar stacking with fan-out wafer-level packaging. Today’s mobile LPDDR still uses copper wire bonding, which limits I/O to roughly 128–256 terminals and creates signal-loss, thermal, and power-efficiency bottlenecks. Samsung’s VCS technology improves this by stacking DRAM dies in a staircase structure and connecting them with copper pillars. The new approach appears to push that further, aiming to bring HBM-like bandwidth closer to mobile devices.