$ASML $DRAM $SKHY $MU Samsung is deepening its ASML tie-up to put High-NA EUV on next-gen DRAM first, targeting 2028, to lock in process lead and push HBM performance. “The better the DRAM, the better the HBM. This is about shrinking the 10nm-class process further for ultra-fine patterning with ASML. Technically it is a big deal.” “China will use every method to close the gap. The most important tool to widen that gap again and stay ahead of rivals is next-generation lithography.” -Lee Jong-hwan, Sangmyung University Tool cost ~$370M, but fewer multipatterning steps can cut mass-production cost if yield works. My take is.... ASML's EUV tools are irreplaceable and brutally expensive. The offset is multipatterning reduction, fewer process steps per layer, which drives production cost down over time. But mastering it takes years. This is nano-level manufacturing, not your average physics. And China being locked out of these tools is a massive disadvantage. The gap with Memory Trio only widens from here.