$MU $DRAM $AMAT Interesting. Through-silicon via (TSV) technology is expanding to RDIMM modules to make them much faster. Micron Samples 256GB DDR5 RDIMMs at 9,200 MT/s for AI Servers, 40% Faster & More Power Efficient Built on Micron’s leading-edge 1-gamma DRAM process with advanced 3D stacking (3DS) and through-silicon vias (TSVs). Speed: Up to 9,200 MT/s — >40% faster than current volume production DDR5 server modules. Power efficiency: A single 256GB module consumes >40% less operating power than two 128GB modules (11.1W vs. 19.4W total). Targeted at AI/HPC workloads (large language models, agentic AI, real-time inference, high-core-count servers) to deliver higher capacity per socket while staying within data center power and thermal limits.