Andrew Feldman(@andrewdfeldman):Complementary Field-Effect Transistor (CFET) technology achieves major static random access memory (SRAM) scaling beyond traditional nanosheet gate-all-around (GAA) devices by vertically stacking nFET and pFET transistors. This folding eliminates lateral n-to-p separation spaces, reducing 6T-SRAM bitcell area by up to 40% to 55% compared to standard nanosheet or forksheet benchmarks. From the below.

Andrew Feldman

@andrewdfeldman

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Andrew Feldman@andrewdfeldman

2026.08.24 02:43

Complementary Field-Effect Transistor (CFET) technology achieves major static random access memory (SRAM) scaling beyond traditional nanosheet gate-all-around (GAA) devices by vertically stacking nFET and pFET transistors. This folding eliminates lateral n-to-p separation spaces, reducing 6T-SRAM bitcell area by up to 40% to 55% compared to standard nanosheet or forksheet benchmarks. From the below.

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