DDR6, the next version of RAM, is planned to start selling in 2028. Major companies Samsung, SK Hynix, and Micron are developing it. It will launch with base speeds of 8,800 MT/s and can go up to 17,600 MT/s. This means much higher bandwidth than today’s DDR5 memory, so computers can move data faster and handle tough jobs better. Early test samples of DDR6 are already being tried out by processor chip companies.

Micron just laid out its full memory roadmap through 2030. • DDR6: >2× bandwidth vs DDR5 • LPDDR6: >35% better power efficiency (1δ node) • HBM5 (2028) → HBM5E (2029) → HBM6 (2030) • vHBM with hybrid bonding starting 2028 • G11 NAND: >400 layers, 2× density vs G9, ramp in 2H27 Vertical stacking is coming. The memory wall is real. #Micron# #HBM# #DDR6# #NAND# #AI# #Semiconductors# $MU

Another announcement from $TER TESTING! > This signals potential growth in memory test performance investment, alongside production capacity expansion. - $TER announced Magnum E2 on September 29, targeting LPDDR6, DDR6, GDDR7 and NAND. - The company says its Near-DUT architecture improves signal integrity and supports parallel testing across up to 64 test sites. > Faster memory requires testers to distinguish good devices from failures at operating speed, potentially creating upgrade demand beyond capacity expansion. > Its scope extends beyond dedicated HBM testing, suggesting AI-related test investment could broaden into conventional DRAM and NAND for SSDs. > The platform prepares customers to qualify emerging interfaces before production; the announcement does not establish immediate DDR6 volume production or customer orders. > Investors should watch the progression from customer qualification to production adoption and memory test revenue growth.