Micron just laid out its full memory roadmap through 2030. • DDR6: >2× bandwidth vs DDR5 • LPDDR6: >35% better power efficiency (1δ node) • HBM5 (2028) → HBM5E (2029) → HBM6 (2030) • vHBM with hybrid bonding starting 2028 • G11 NAND: >400 layers, 2× density vs G9, ramp in 2H27 Vertical stacking is coming. The memory wall is real. #Micron# #HBM# #DDR6# #NAND# #AI# #Semiconductors# $MU

Micron just laid out its AI memory roadmap through 2030. Token efficiency = Bandwidth + Energy Efficiency + Capacity • HBM (JEDEC + Custom) → HBM4 to HBM6 • vHBM (Vertical 3D HBM) starts 2028 • vEIM (Vertical Edge Inference Memory) targets 2TB/s & <1pJ/bit Vertical stacking is coming. Memory wall is real. #HBM# #Micron# #AI# #Semiconductors# #vHBM#