Elon will use the most recent laser based technology to mass produce all the chips needed by Space X , xAI, Tesla.
This is why this very recent new technology (the Swiss don't just make cheese and chocolate, they also lead in chip development technology) is much better, cheaper, faster and doesn't need as complex and expensive clean rooms or
TWINSCAN EXE 300 million $ (a piece) machines from the likes of ASML.
One more time Elon (and us) is leading the way from the rest of the industry!
Here's the details, I hope you all understand that :
@elonmusk
**In the free-form laser nanolithography approach, the laser does not need to be “built” with an extremely short wavelength like EUV.** Instead, fine features (down to ~100–250 nm) are achieved through a combination of nonlinear physics, beam shaping, and post-processing.
### How it reaches super-fine resolution
1. **Infrared laser + nonlinear absorption**
Silicon is transparent to near-infrared light (typically ~1.55 µm). When an ultrafast or nanosecond pulse is tightly focused *inside* the silicon, nonlinear effects (multi-photon absorption, free-carrier generation, thermal nonlinearities) cause a very localized modification only at the high-intensity focal region. This allows energy to be deposited in a volume smaller than the normal diffraction limit of the wavelength.
2. **Special beam shaping (key enabler)**
- **Bessel beams** (created with spatial light modulators or axicons) are non-diffracting. They maintain a long, thin high-intensity zone deep inside the wafer instead of spreading out.
- Holographic projection and polarization control further sculpt the intensity pattern.
These techniques let researchers write precise “seed” structures tens of micrometers below the surface.
3. **Seeding and local field enhancement**
The first laser pulses create tiny nano-voids or modified regions. These seeds strongly enhance the local optical field for subsequent pulses (a positive-feedback effect similar to plasmonic enhancement). The modification then grows preferentially along preferred directions (often controlled by laser polarization), producing very narrow lines or planes.
4. **Translation to the surface + selective etching**
After the subsurface pattern is written, the wafer is polished to bring the modified region to the surface. A brief wet etch then preferentially attacks the laser-modified zones, converting the buried seeds into surface relief (nano-lines, curves, or free-form patterns) with widths of 150–250 nm (and in some optimized cases down to ~100 nm).
### Bottom line
The laser itself is not an ultra-short-wavelength source. The fine resolution comes from **nonlinear localization + engineered beam shapes + seeding feedback + selective etching**. This is fundamentally different from traditional optical lithography, which relies on the wavelength itself (and sophisticated optics/masks) to set the minimum feature size.