$ASML AND TSMC PUSH EUV MASKS TO 12-INCH FORMAT
ASML and TSMC launched an industry initiative to move EUV lithography from today’s 6-inch photomasks to 12-inch masks.
The plan targets a 12-inch mask pilot line by 2031 and advanced-node production using 12-inch High NA EUV by 2033.
TSMC also plans to adopt ASML’s High NA EUV in high-volume manufacturing from 2030.
The larger mask format is designed to improve fab productivity, reduce chipmaking costs and eliminate stitching constraints as more advanced AI-era chip layers move to High NA EUV.