✨At #FMS2026#, @SKhynix showcased its vision for next-generation AI memory through Tiered Memory. From #HBM# and #DRAM# to #NAND#, #SSD#, #CXL#, and #HBF#, we're building a full-stack memory portfolio to power the next wave of AI. 🔗 #SKhynix# #FMS#

At #FMS2026#, @SKhynix unveiled the first standard specifications for High Bandwidth Flash (#HBF#) with @SanDisk through @OpenComputePrj (#OCP#), alongside its vision for Tiered Memory. Learn more 👇 #SKhynix# #Semiconductor#

AI agents are accelerating decisions and creating new data-intensive workloads, increasing the need for high-performance memory at the edge and scalable storage in the data center. At FMS 2026, Micron was recognized with three awards for innovations built to meet those demands:​ 🏆 Best of Show Award: 245TB​ Micron 6600 ION SSD 🌱 Sustainability Award: 245TB​ Micron 6600 ION SSD 💻 User Implementation Award: Micron LPCAMM2​ See the solutions driving the future of memory and storage from cloud to edge:

AI agents will soon outnumber the global human population, leading to an era where AI agents primarily interact with and query other AI systems rather than humans. This surge in AI-generated requests will demand much faster database and application processing, requiring broader computing architecture innovations. As a result, the value of memory chips is expected to move away from pure storage capacity (price per GB) toward processing performance, speed, and efficiency, especially the ability to handle rapid data access and token generation for AI inference workloads. Panelists from Samsung, Micron, SK Hynix, and others highlighted the limits of HBM alone and the rise of hierarchical/hybrid memory architectures that combine HBM, DRAM, and high-bandwidth NAND flash (HBF). The overall market is seen shifting from training-centric to inference-centric AI, making high-capacity, high-speed memory solutions increasingly critical. -FMS 2026 Event in Santa Clara, California. $MU $SKHY $DRAM $CRWD $NET $LITE